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What is Gallium Nitride (Galium Nitride)?
Inorganic gallium nitride has the chemical formula GaN. It is made up of gallium, nitrogen, and nitride. It is a semiconductor that has a wide bandgap and is commonly used in light emitting diodes. This compound has the same structure as wurtzite and is very hard. Gallium Nitride has an energy gap of about 3.4 electron-volts. This can be useful in high-speed and high-power optoelectronic devices. Gallium nitride is used, for instance, in violet lasers. You can use it without nonlinear semi-conductor pumped solid state lasers.

The invention of blue LEDs won Professor Yuki Akasaki of Nagoya University in Japan as well as Hiroshi Amao of Nagoya University. Shuji Nakamura of University of California Santa Barbara was also awarded the Nobel Prize in Physics in 2014 for his work.
Applications of GaN

GaN series has low heat production rate and high electric breakdown field. These materials are crucial for developing high-temperature and high power electronic devices, as well high-frequency microwave devices.

GaN materials are ideal for light-emitting devices with short wavelengths. GaN, and its alloys, cover a wide range of spectral wavelengths from red through to ultraviolet.

GaN is the current frontier and focus of global semiconductor technology. This is a new semiconductor material used for microelectronics and optoelectronics. Along with semiconductor materials, such as SIC or diamond, it’s known as the successor of first-generation Ge and Si.

Semiconductor material, second-generation GaAs materials, InP compounds semiconductor materials and third generation semiconductor materials. It has a large bandgap and a strong atomic structure. It also has high thermal conductivity (nearly uncorroded by acid) as well as good radiation resistance. It’s used in photoelectronics and devices with high temperatures and power.

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